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LR2301

RF Transistor by Polyfet RF Devices
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The LR2301 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 1.1 GHz, Power 50.96 dBm, Power(W) 125 W, Gain 18 dB, Power Gain (Gp) 18 dB. Tags: Flanged. More details for LR2301 can be seen below.

Product Specifications

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Product Details

  • Part Number
    LR2301
  • Manufacturer
    Polyfet RF Devices
  • Description
    LDMOS Push Pull Transistor from 1 to 1100 MHz

General Parameters

  • Transistor Type
    LDMOS View all
  • Technology
    Si View all
  • Application Industry
    Communication, Broadcast
  • Frequency
    1 MHz to 1.1 GHz
  • Power
    50.96 dBm
  • Power(W)
    125 W
  • Gain
    18 dB
  • Power Gain (Gp)
    18 dB
  • Transconductance
    5 MOhms (Forward)
  • VSWR
    1.20:1
  • Supply Voltage
    28 V
  • Drain Gate Voltage
    80 V
  • Breakdown Voltage - Drain-Source
    70 V
  • Voltage - Drain-Source (Vdss)
    80 V
  • Voltage - Gate-Source (Vgs)
    -9 to 11 V
  • Drain Efficiency
    0.5
  • Drain Current
    15 A
  • Drain Bias Current
    1 mA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    360 W
  • Feedback Capacitance
    1.4 pF
  • Input Capacitance
    70 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    25 pF
  • Thermal Resistance
    0.48 Degree C/W
  • Package Type
    Flanged View all
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Saturation Resistance: 0.35 Ohms

Technical Documents
View details on the manufacturer's website
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