The MRF8S9120N from NXP Semiconductors is a RF Transistor with Frequency 865 to 960 MHz, Power 45.19 dBm, Power(W) 33.04 W, P1dB 50.8 dBm, Duty_Cycle 0.1. More details for MRF8S9120N can be seen below.

Product Specifications

  • Part Number
    MRF8S9120N
  • Manufacturer
    NXP Semiconductors
  • Description
    Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 33 W Avg., 28 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, GSM, EDGE
  • CW/Pulse
    Pulse, CW
  • Frequency
    865 to 960 MHz
  • Power
    45.19 dBm
  • Power(W)
    33.04 W
  • CW Power
    33 to 120 W
  • P1dB
    50.8 dBm
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    19 to 22 dB
  • Input Return Loss
    -20.4 to -12 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.4 to 2.9 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.342
  • Drain Current
    800 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.62 °C/W
  • Package Type
    Flange
  • Package
    CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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