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The MRFE6S9125NB from NXP Semiconductors is a RF Transistor with Frequency 865 to 960 MHz, Power 44.31 dBm, Power(W) 26.98 W, P1dB 51 dBm, Duty_Cycle 0.01. Tags: Flange. More details for MRFE6S9125NB can be seen below.
450 W GaN-on-SiC HEMT from 758 to 960 MHz
700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
10 W Surface-Mount GaN HEMT from DC to 8 GHz
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
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