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LX2201

RF Transistor by Polyfet RF Devices
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The LX2201 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 1.1 GHz, Power 45.44 dBm, Power(W) 35 W, Gain 16 dB (Power), Power Gain (Gp) 16 dB. Tags: Flanged. More details for LX2201 can be seen below.

Product Specifications

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Product Details

  • Part Number
    LX2201
  • Manufacturer
    Polyfet RF Devices
  • Description
    LDMOS Single Ended Transistor from 1 to 1100 MHz

General Parameters

  • Transistor Type
    LDMOS View all
  • Technology
    Si View all
  • Application Industry
    Braodcast, Communication
  • Frequency
    1 MHz to 1.1 GHz
  • Power
    45.44 dBm
  • Power(W)
    35 W
  • Gain
    16 dB (Power)
  • Power Gain (Gp)
    16 dB
  • Transconductance
    2.8 MOhms
  • VSWR
    1.20:1
  • Supply Voltage
    28 V
  • Drain Gate Voltage
    80 V
  • Breakdown Voltage - Drain-Source
    70 V
  • Voltage - Drain-Source (Vdss)
    80 V
  • Voltage - Gate-Source (Vgs)
    -9 to 11 V
  • Drain Efficiency
    0.55
  • Drain Current
    8 A
  • Drain Bias Current
    2 mA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    183 W
  • Feedback Capacitance
    0.8 pF
  • Input Capacitance
    40 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    15.2 pF
  • Thermal Resistance
    0.95 Degree C/W
  • Package Type
    Flanged View all
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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