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WP2816P0008MH

RF Transistor by WAVEPIA (79 more products)

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The WP2816P0008MH from WAVE PIA is a GaN HEMT transistor that operates from DC to 18 GHz. It provides a saturated output power of 8 W and a small signal gain of 9.7 dB, and an efficiency of 25.8% @ 16 GHz. This transistor requires 28 to 32 V of power supply. It is available in a surface-mount package and is ideal for broadband amplifiers, SATCOM, test instrumentation, and radar applications.

Product Specifications

    Product Details

    • Part Number :
      WP2816P0008MH
    • Manufacturer :
      WAVEPIA
    • Description :
      8 W GaN HEMT Transistor from DC to 18 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar, SATCOM, Test & Measurement
    • Frequency :
      DC to 18 GHz
    • Power :
      36.02 dBm
    • Power(W) :
      4 W
    • Peak Output Power :
      4 W
    • Saturated Power :
      8 W
    • Small Signal Gain :
      9.7 dB
    • Efficiency :
      25.8 %
    • Supply Voltage :
      28 to 32 V
    • Threshold Voltage :
      -3 to 1 V
    • Voltage - Drain-Source (Vdss) :
      160 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Current :
      1 A
    • Package Type :
      Ceramic, 2-Hole Flange
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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