WP2816P0010MH

RF Transistor by WAVEPIA (79 more products)

Note : Your request will be directed to WAVEPIA.

The WP2816P0010MH from WAVEPIA is a RF Transistor with Frequency DC to 18 GHz, Power 36 dBm, Power(W) 4 W, Saturated Power 8 to 10 W, Duty_Cycle 10%. Tags: Flanged. More details for WP2816P0010MH can be seen below.

Product Specifications

    Product Details

    • Part Number :
      WP2816P0010MH
    • Manufacturer :
      WAVEPIA
    • Description :
      4 W, GaN HEMT Transistor from DC to 18 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM, Test & Measurement, Radar
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      DC to 18 GHz
    • Power :
      36 dBm
    • Power(W) :
      4 W
    • Saturated Power :
      8 to 10 W
    • Pulsed Width :
      0.1 mS
    • Duty_Cycle :
      10%
    • Small Signal Gain :
      9.7 dB
    • Power Added Effeciency :
      26.20%
    • VSWR :
      10.00:1
    • Supply Voltage :
      28 to 32 V
    • Threshold Voltage :
      -3.1 V (Gate)
    • Breakdown Voltage :
      160 V
    • Voltage - Drain-Source (Vdss) :
      160 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      26.20%
    • Drain Current :
      1000 mA (Saturated)
    • Quiescent Drain Current :
      300 mA
    • Package Type :
      Flanged
    • Package :
      680B
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Gate Quiescent Voltage : 2.2 V, Pulsed Drain Efficiency : 26.2%

    Technical Documents

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Application Note

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