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IGN1214M900

RF Transistor by Integra Technologies, Inc.
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The IGN1214M900 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.20 to 1.40 GHz, Power 59.54 dBm, Power(W) 900 W, Duty_Cycle 10%, Gain 14 to 19 dB. Tags: Flanged, Ceramic. More details for IGN1214M900 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN1214M900
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    L-Band, GaN/SiC HEMT RF Power Transistor from 1.20 to 1.40 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Radar View all
  • Application
    L Band View all
  • CW/Pulse
    Pulse View all
  • Frequency
    1.20 to 1.40 GHz
  • Power
    59.54 dBm
  • Power(W)
    900 W
  • Peak Output Power
    900 W
  • Pulsed Width
    300 uS
  • Duty_Cycle
    10%
  • Gain
    14 to 19 dB
  • Efficiency
    63%
  • Input Return Loss
    8 to 18 dB
  • VSWR
    2.00:1, 3.00:1
  • Supply Voltage
    50 V
  • Input Power
    70 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Drain Efficiency
    50 to 80 %
  • Drain Current
    72 A
  • Thermal Resistance
    0.15 Degree C/W
  • Package Type
    Flanged, Ceramic
  • Package
    Ceramic lid
  • RoHS
    Yes
  • Operating Temperature
    -55 to 225 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    DC Gate Current: 7.2 mA, Pulse droop: -0.6 to 0.2 dB, Gate Pinch-Off Voltage: -5V

Technical Documents
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