1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Polyfet RF Devices
  6. LR401

LR401

RF Transistor by Polyfet RF Devices
164 more products from this company
Download Datasheet
Request Quote

Note : Your request will be directed to Polyfet RF Devices.

The LR401 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 1 GHz, Power 51.13 dBm, Power(W) 130 W, Gain 14 dB, Power Gain (Gp) 14 dB. Tags: Flanged. More details for LR401 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    LR401
  • Manufacturer
    Polyfet RF Devices
  • Description
    LDMOS Push Pull Transistor from 1 to 100 MHz

General Parameters

  • Transistor Type
    LDMOS View all
  • Technology
    Si View all
  • Application Industry
    Military, Broadcast, Cellular, Base Station
  • Application
    FM, MRI Systems
  • Frequency
    1 MHz to 1 GHz
  • Power
    51.13 dBm
  • Power(W)
    130 W
  • Gain
    14 dB
  • Power Gain (Gp)
    14 dB
  • Transconductance
    2.7 MOhms (Forward)
  • VSWR
    1.10:1
  • Supply Voltage
    28 V
  • Drain Gate Voltage
    70 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    70 V
  • Voltage - Gate-Source (Vgs)
    20 V
  • Drain Efficiency
    0.55
  • Drain Current
    13.5 A
  • Drain Bias Current
    1 mA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    230 W
  • Feedback Capacitance
    4 pF
  • Input Capacitance
    80 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    50 pF
  • Thermal Resistance
    0.75 Degree C/W
  • Package Type
    Flanged View all
  • RoHS
    Yes
  • Grade
    Military View all
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Saturation Resistance: 0.28 Ohms

Technical Documents
View details on the manufacturer's website
View similar products