LX141

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LX141 Image

The LX141 from Polyfet RF Devices is a RF Transistor with Power 45 dBm, Power(W) 35 W, Power Gain (Gp) 16 dB, VSWR 15.0:1, Breakdown Voltage - Drain-Source 110 V. Tags: Flange. More details for LX141 can be seen below.

Product Specifications

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Product Details

  • Part Number
    LX141
  • Manufacturer
    Polyfet RF Devices
  • Description
    35 W, Si LDMOS Power Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast
  • Application
    Radio, Cellular, Base Stations, MRI
  • Power
    45 dBm
  • Power(W)
    35 W
  • Power Gain (Gp)
    16 dB
  • Transconductance
    1 MOhms
  • VSWR
    15.0:1
  • Drain Gate Voltage
    110 V
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    20 V
  • Drain Efficiency
    0.5
  • Drain Current
    4.5 A
  • Drain Bias Current
    1 mA
  • Quiescent Drain Current
    0.20 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    100 W
  • Feedback Capacitance
    0.7 pF
  • Input Capacitance
    30 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    30 pF
  • Thermal Resistance
    1.40 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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