RF Transistors - RFHIC

84 RF Transistors from RFHIC meet your specification.

RF Transistors from RFHIC are listed on everything RF. We have compiled a list of RF Transistors from the RFHIC website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to RFHIC and their distributors in your region.

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  • Manufacturers: RFHIC
Description:800 W GaN Power Transistor from 1930 to 1995 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1930 to 1995 MHz
Package Type:
Flanged
Supply Voltage:
52 V
more info
Description:28 W GaN-on-SiC Transistor from 4.5 to 4.95 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
4500 to 4950 MHz
Power:
36.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
5 W
Gain:
14 dB
Supply Voltage:
48 V
more info
Description:15.8 W GaN Transistor from 3.4 to 3.8 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
29.03 dBm
Package Type:
Surface Mount, Flanged
Power(W):
0.8 W
Gain:
18.2 dB
Supply Voltage:
48 V
more info
Description:56.2 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
40 dBm
Package Type:
Surface Mount, Flanged
Power(W):
10 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:468 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.6 dB
Supply Voltage:
48 V
more info
Description:630 W, GaN on SiC OptiGaN HEMT from 758 to 960 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
758 to 960 MHz
Power:
50.29 dBm
Package Type:
Surface Mount, Flanged
Power(W):
107 W
Gain:
17 dB
Supply Voltage:
48 V
more info
Description:316 W, GaN on SiC OptiGaN HEMT from 2520 to 2630 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2520 to 2630 MHz
Power:
46.02 dBm
Package Type:
Surface Mount, Flanged
Power(W):
40 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:28.2 W, GaN on SiC OptiGaN HEMT from 1800 to 2700 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2700 MHz
Power:
33.01 dBm
Package Type:
Surface Mount, Flanged
Power(W):
2 W
Gain:
17.9 dB
Supply Voltage:
48 V
more info
Description:240 W, GaN on SiC OptiGaN HEMT from 2300 to 2400 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2300 to 2400 MHz
Power:
46.02 dBm
Package Type:
Surface Mount, Flanged
Power(W):
40 W
Gain:
15.3 dB
Supply Voltage:
48 V
more info
Description:288 W, GaN on SiC OptiGaN HEMT from 3400 to 3600 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
10.2 dB
Supply Voltage:
48 V
more info

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