RF Transistors - RFHIC

63 RF Transistors from RFHIC meet your specification.
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  • Manufacturers: RFHIC
Description:410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 4.1 GHz
Power:
52.2 dBm
Power(W):
410 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3600 to 3800 MHz
Package Type:
Flanged
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
Application Industry:
Wireless Infrastructure, Base Station
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 3.98 GHz
Power:
47.5 dBm
Power(W):
56.2 W
Gain:
14.5 dB
Supply Voltage:
48 V
more info
Description:GaN Power Transistors from 1030 to 1090 MHz
Application Industry:
Radar, Aerospace & Defence
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60.41 dBm
Package Type:
Flanged
Power(W):
1100 W
Supply Voltage:
50 V
more info
Description:550 W GaN Power Transistor from 1295 to 1305 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1295 to 1305 MHz
Power:
57.4 dBm
Package Type:
Flanged
Power(W):
550 W
Supply Voltage:
50 V
more info
Description:580 W GaN Power Transistor from 499 to 501 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
499 to 501 MHz
Power:
57.77 to 57.85 dBm
Package Type:
Flanged
Power(W):
598 to 609 W
Supply Voltage:
50 to 52 V
more info
Description:300 Watt GaN Power Transistor from 910 to 920 MHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
910 to 920 MHz
Power:
55.9 dBm
Package Type:
Surface Mount
Power(W):
330 W
Gain:
17.1 to 18 dB
Supply Voltage:
50 V
more info
Description:GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.94 to 55.56 dBm
Package Type:
Surface Mount
Power(W):
312.1 to 360 W
Gain:
11.4 to 12.6 dB
Supply Voltage:
52 Vdc
more info
Description:GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
53.77 to 54.05 dBm
Package Type:
Surface Mount
Power(W):
238.4 to 254.1 W
Gain:
13.1 to 13.8 dB
Supply Voltage:
52 Vdc
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Gain:
18.7 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info

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