RF Transistors - Page 9

2358 RF Transistors from 26 Manufacturers meet your specification.
Description:240 W, GaN on SiC OptiGaN HEMT from 2300 to 2400 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2300 to 2400 MHz
Power:
46.02 dBm
Package Type:
Surface Mount, Flanged
Power(W):
40 W
Gain:
15.3 dB
Supply Voltage:
48 V
more info
Description:960 to 1215 MHz, 10.6 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
55.44 to 56.94 dBm
Package Type:
Flanged
Power(W):
494.31 W
Gain:
10.6 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 10.7 to 11.7 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Supply Voltage:
10 V
more info
Description:18.8 W, GaN HEMT Transistor from 6.95 to 7.45 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
6.95 to 7.45 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
PD85004 Image
Description:5 W, LDMOS RF Transistor from 860 to 960 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
860 to 960 MHz
Power:
36.98 dBm
Power(W):
4 to 5 W
Supply Voltage:
13.6 V
more info
Description:120 W, GaN on SiC Power Transistor from 1 to 2 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 2 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 6 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
38 dBm
Power(W):
6.31 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-8GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
39 to 40 dBm (P5dB)
Package Type:
Flanged
Power(W):
7.94 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:20 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:20 W, GaN HEMT Transistor form DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
0.1 dBm
Package Type:
Die
Power(W):
0.001 W
Supply Voltage:
50 V
more info
Description:12GHz Low Noise FET in Dual Mold Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
4-pin thin Plastic
more info

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