RF Transistors - Ampleon

305 RF Transistors from Ampleon meet your specification.
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  • Manufacturers: Ampleon
Description:55 W LDMOS Power Transistor from 5 to 520 MHz for LMR Applications
Application Industry:
Cellular
Transistor Type:
LDMOS
Frequency:
1 to 520 MHz
Package Type:
Flanged
Supply Voltage:
12.5 to 14 V
more info
Description:1.2 kW LDMOS Power Transistor from 960 to 1215 MHz for Avionics Application
Transistor Type:
LDMOS
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
60.79 dBm
Package Type:
Flanged
Power(W):
1.2 kW
Supply Voltage:
50 V
more info
Description:2-Stage Asymmetrical Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
47.4 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
55 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
Description:600 W GaN Doherty Power Transistor from 700 to 1000 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
700 to 1000 MHz
Package Type:
Surface Mount
Supply Voltage:
48 to 52 V
more info
Description:700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
0.9 to 1.4 GHz
Power:
58.6 to 59.03 dBm
Package Type:
2-Hole Flanged
Power(W):
725 to 800 W
Supply Voltage:
50 V
more info
Description:850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
617 to 960 MHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
48 V
Package:
Plastic Earless Flang 6 Leads
more info
Description:100 W GaN-Based Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.12 W
Supply Voltage:
50 V
more info
Description:500 W HF/VHF LDMOS Transistor from 10 to 700 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW
Frequency:
10 to 700 MHz
Power:
57 dBm
Package Type:
Flanged
Power(W):
500 W
Supply Voltage:
50 V
more info
Description:Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
Frequency:
2.3 to 2.7 GHz
Power:
48 to 49.5 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
63 to 89.12 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
Description:3-Stage LDMOS Doherty MMIC from 3300 to 3800 MHz
Application Industry:
Base Station, Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
3.3 to 3.8 GHz
Power:
48 to 49 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
63 to 79.4 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info

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