RF Transistors - Ampleon

299 RF Transistors from Ampleon meet your specification.
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  • Manufacturers: Ampleon
Description:100 W GaN-Based Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
41.5 dBm
Power(W):
14.12 W
Supply Voltage:
50 V
more info
Description:500 W HF/VHF LDMOS Transistor from 10 to 700 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW
Frequency:
10 to 700 MHz
Power(W):
500 W
Supply Voltage:
50 V
more info
Description:Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
Frequency:
2.3 to 2.7 GHz
Power:
48 to 49.5 dBm (P3dB)
Power(W):
63 to 89.12 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
Description:3-Stage LDMOS Doherty MMIC from 3300 to 3800 MHz
Application Industry:
Base Station, Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
3.3 to 3.8 GHz
Power:
48 to 49 dBm (P3dB)
Power(W):
63 to 79.4 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
Description:100 W GaN HEMT from DC to 3.5 GHz
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
50 dBm (PL1dB)
Power(W):
100 W (PL1dB)
Supply Voltage:
50 V
Package:
Thermally Enhanced
more info
Description:30 W GaN-on-SiC HEMT from DC to 6 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
30 dBm (PL1dB)
Power(W):
1 W (PL1dB)
Supply Voltage:
50 V
Package:
Thermally Enhanced
more info
Description:30 W GaN CW/Pulsed Transistor from DC to 6 GHz
Application Industry:
Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Power(W):
30 W
Gain:
15.5 to 17 dB
more info
Description:LDMOS Doherty MMIC from 3.4 to 3.8 GHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
3400 to 3800 MHz
Power:
39 dBm
Power(W):
7.9433 W
Gain:
31.1 to 36.1 dB
Supply Voltage:
28 V
more info
Description:430 W LDMOS Doherty Power Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2496 to 2690 MHz
Supply Voltage:
28 V
Package:
Air Cavity Plastic Earless Flanged Package 6 Leads
more info
Description:600 W LDMOS Power Transistor from 2110 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2110 to 2170 MHz
Power:
50.41 dBm
Power(W):
110 W
Supply Voltage:
30 V
Package:
6 leaded flange
more info

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