RF Transistors - Page 6

2358 RF Transistors from 26 Manufacturers meet your specification.
Description:630 W, GaN on SiC OptiGaN HEMT from 758 to 960 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
758 to 960 MHz
Power:
50.29 dBm
Package Type:
Surface Mount, Flanged
Power(W):
107 W
Gain:
17 dB
Supply Voltage:
48 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
26 dBm
Package Type:
Chip
Power(W):
0.4 W
Gain:
7.3 to 11.2 dB
Supply Voltage:
6 to 8 V
more info
MRF1513N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
12.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info
Description:DC to 175 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
7.2 V
more info
Description:Surface Mount High Linearity Silicon NPN RF Bipolar Transistor
Application Industry:
Wireless Infrastructure, ISM, Wireless Communicati...
Transistor Type:
Bipolar
Technology:
SiGe
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
14.5 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.3 V
Package:
SOT343
more info
Description:1.02 to 1.5 GHz, 60 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.02 to 1.5 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
60 W
Gain:
23 dB
Supply Voltage:
50 V
more info
Description:15.8 W GaN Transistor from 3.4 to 3.8 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
29.03 dBm
Package Type:
Surface Mount, Flanged
Power(W):
0.8 W
Gain:
18.2 dB
Supply Voltage:
48 V
more info
Description:3600 W GaN on SiC Power Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1030 and 1090 MHz
Power:
65.56 dBm
Package Type:
Ceramic
Power(W):
3600 W
Gain:
18 to 22 dB
Supply Voltage:
100 V
more info
Description:100 W GaN HEMT Transistor from 5.3 to 5.8 GHz
Application Industry:
Broadcast, Military, Radar, SATCOM, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.3 to 5.8 GHz
Power:
50.3 dBm (Psat)
Package Type:
4-Hole Flanged
Power(W):
107.15 W (Psat)
Supply Voltage:
48 V
more info
RF2L15200CB4 Image
Description:200 W, LDMOS RF Transistor from 860 MHz to 1.5 GHz
Application Industry:
Avionics, Commercial, Broadcast, Wireless Infrastr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
860 MHz to 1.5 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
200 W
Supply Voltage:
28 V
more info
WG35165SP Image
Description:165 W, GaN on SiC Power Transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Supply Voltage:
50 V
more info

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