RF Transistors - Page 6

2364 RF Transistors from 26 Manufacturers meet your specification.
Description:316 W, GaN on SiC OptiGaN HEMT from 1805 to 2200 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 2200 MHz
Power:
46.43 dBm
Package Type:
Surface Mount, Flanged
Power(W):
44 W
Gain:
15.4 dB
Supply Voltage:
48 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
25.5 dBm
Package Type:
Chip
Power(W):
0.35 W
Gain:
8.5 to 13.5 dB
Supply Voltage:
8 V
more info
MRF1K50N Image
Description:Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, ISM
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 500 MHz
Power:
61.53 dBm
Package Type:
Flanged
Power(W):
1422.33 W
Supply Voltage:
50 V
Package:
OM--1230--4L PLASTIC
more info
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Supply Voltage:
24 V
more info
Description:Surface Mount High Linearity Silicon NPN RF Bipolar Transistor
Application Industry:
Wireless Infrastructure, ISM, Wireless Communicati...
Transistor Type:
Bipolar
Technology:
SiGe
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
14.5 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.3 V
Package:
SOT343
more info
Description:420 to 470 MHz, 175 W Transistor for Pulsed Avionics Applications
Application Industry:
Radar
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
420 to 470 MHz
Power:
52.43 dBm
Package Type:
Flanged
Power(W):
175 W
Gain:
25.5 dB
Supply Voltage:
50 V
more info
Description:28 W GaN-on-SiC Transistor from 4.5 to 4.95 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
4500 to 4950 MHz
Power:
36.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
5 W
Gain:
14 dB
Supply Voltage:
48 V
more info
Description:3100 to 3500 MHz, 7.4 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
26.9 dBm
Package Type:
Flanged
Power(W):
0.49 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:100 W GaN HEMT Transistor from 5.3 to 5.8 GHz
Application Industry:
Broadcast, Military, Radar, SATCOM, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.3 to 5.8 GHz
Power:
50.3 dBm (Psat)
Package Type:
4-Hole Flanged
Power(W):
107.15 W (Psat)
Supply Voltage:
48 V
more info
SD57045 Image
Description:45 W, LDMOS / FET RF Transistor from 925 to 965 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 965 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
45 W
Supply Voltage:
28 V
more info
WGB01004050F Image
Description:50 W, GaN on SiC Power Transistor from 1 to 4 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 4 GHz
Power:
46.98 dBm
Package Type:
Flanged
Power(W):
49.89 W
Supply Voltage:
50 V
more info

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