RF Transistors - Page 2

2358 RF Transistors from 26 Manufacturers meet your specification.
Description:28 W GaN-on-SiC Transistor from 4.5 to 4.95 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
4500 to 4950 MHz
Power:
36.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
5 W
Gain:
14 dB
Supply Voltage:
48 V
more info
Description:15 W GaN High Electron Mobility Transistor from DC to 6 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement, Wireless In...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Package:
SMT
more info
Description:60 W GaN HEMT Operates up to 7 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 7 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:225 W, LDMOS RF Transistor from DC to 1.5 GHz
Application Industry:
Avionics, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.5 GHz
Power:
53.52 dBm
Package Type:
Flanged
Power(W):
225 W
Supply Voltage:
50 V
more info
WG18200SP Image
Description:200 W, GaN on SiC Power Transistor from 1.805 to 1.88 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
33 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:20 GHz Super Low Noise FET in Hollow Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
20 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
Micro-X plastic
more info
Description:0.5 to 26GHz Low Noise E-PHEMT in a Wafer Scale Package
Application Industry:
Wireless Infrastructure, SATCOM, Broadcast, Wirele...
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
500 MHz to 26 GHz
Power:
8 dBm
Package Type:
Surface Mount
Power(W):
0.006 W
Supply Voltage:
2 V
Package:
SMT 1.05x0.55
more info
Description:14 W GaN Power Transistor from 30 MHz to 2.7 GHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 2.7 GHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.1 W
Gain:
13.5 to 18 dB
Supply Voltage:
12 to 34 V
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 28 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 28 GHz
Power:
28.5 dBm
Package Type:
Chip
Power(W):
0.71 W
Supply Voltage:
2.5 to 8 V
more info

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