RF Transistors - Page 8

2358 RF Transistors from 26 Manufacturers meet your specification.
Description:28.2 W, GaN on SiC OptiGaN HEMT from 1800 to 2700 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2700 MHz
Power:
33.01 dBm
Package Type:
Surface Mount, Flanged
Power(W):
2 W
Gain:
17.9 dB
Supply Voltage:
48 V
more info
Description:20 W GaN on SiC HEMT from DC to 7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 7 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Gain:
15.2 to 17.2 dB
Supply Voltage:
50 V
more info
Description:5 Watt GaN HEMT from 0.03 GHz to 3 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
30 MHz to 3 GHz
Power:
37.78 dBm
Package Type:
Surface Mount
Power(W):
6 W
Gain:
18 dB
Supply Voltage:
32 V
Package:
3 x 3 mm
more info
Description:30 W, 8.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Supply Voltage:
10 V
more info
Description:2.5 kW LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Gain:
28.5 to 29.8 dB
Supply Voltage:
75 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
25 dBm
Package Type:
Chip
Power(W):
0.32 W
Gain:
7.8 to 12.5 dB
Supply Voltage:
6 to 8 V
more info
A2G35S200-01S Image
Description:Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.6 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
Description:DC to 20 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Package Type:
Flanged
Gain:
9.5 to 11.5 dB
Supply Voltage:
2 V
more info
Description:RF Bipolar Transistor from DC to 12 GHz
Application Industry:
ISM, Radar, GNSS, Wireless Infrastructure, Wireles...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
DC to 12 GHz
Power:
11 dBm
Package Type:
Surface Mount
Power(W):
0.0126 W
Gain:
24.5 dB
Supply Voltage:
3 V
more info
Description:960 MHz to 1.21 GHz, 150 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Gain:
20 dB
Supply Voltage:
50 V
more info
Description:56.2 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
40 dBm
Package Type:
Surface Mount, Flanged
Power(W):
10 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info

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