RF Transistors - Page 8

2364 RF Transistors from 26 Manufacturers meet your specification.
Description:398 W GaN Transistor from 1800 to 2200 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2700 MHz
Power:
48.51 dBm
Package Type:
Surface Mount, Flanged
Power(W):
71 W
Gain:
13 dB
Supply Voltage:
48 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
QPD1425L Image
Description:300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
Application Industry:
Radar, Military, Broadcast, Communication, Test & ...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1200 to 1400 MHz
Power:
55 dBm (Psat)
Package Type:
2-Hole Flanged
Power(W):
300 W (Psat)
Supply Voltage:
65 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 150 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
15 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:1.805 to 1.88 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
32 V
Package:
SOT1258-7
more info
Description:HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
28.5 dBm
Package Type:
Chip
Power(W):
0.71 W
Gain:
9 to 12.5 dB
Supply Voltage:
8 V
more info
MMRF1310H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
NI--780H--4L
more info
Description:5 W S-Band GaN HEMT from 2.5 to 3.8 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 3.8 GHz
Power:
35.5 to 37 dBm (Psat)
Package Type:
Surface Mount
Power(W):
3.54 to 5.01 W (Psat)
Gain:
17 to 18 dB
Supply Voltage:
50 V
more info
Description:RF HBT for 5GHz Applications
Application Industry:
GNSS, SATCOM, Wireless Infrastructure, Wireless Co...
Transistor Type:
Bipolar
Technology:
Si
Frequency:
Up to 85 GHz
Power:
5 dBm
Package Type:
Surface Mount
Power(W):
0.003 W
Gain:
23 dB
Supply Voltage:
1.8 V
more info
Description:1.03 to 1.09 GHz, 500 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500 W
Gain:
16.5 dB
Supply Voltage:
50 V
more info
Description:320 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
13.9 dB
Supply Voltage:
48 V
more info

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