RF Transistors - Page 10

2358 RF Transistors from 26 Manufacturers meet your specification.
Description:288 W, GaN on SiC OptiGaN HEMT from 3400 to 3600 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
10.2 dB
Supply Voltage:
48 V
more info
Description:Single Voltage E-pHEMT Low Noise 40 dBm OIP3 in SOT-89 package
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
23 dBm
Package Type:
Surface Mount
Power(W):
0.2 W
Supply Voltage:
4 V
Package:
SOT-89
more info
Description:150 Watts - 48 Volts, 150µs, 5% Radar 890 - 1000 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
890 MHz to 1 GHz
Power:
51.76 to 53.22 dBm
Package Type:
Flanged
Power(W):
209.89 W
Supply Voltage:
48 V
Package:
55KT-1
more info
Description:21 dB, GaAs E-pHEMT RF Transistor from 100 MHz to 8 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure...
Transistor Type:
E-pHEMT
Technology:
GaAs
Frequency:
100 MHz to 8 GHz
Power:
26 dBm
Package Type:
Die
Power(W):
0.4 W
Gain:
21 dB
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:1800 Watt, GaN on SiC Discrete Transistor from 1 to 1.1 GHz
Application Industry:
Aerospace & Defence, Test & Measurement, Avionics,...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1 to 1.1 GHz
Power:
62.7 dBm
Package Type:
Flanged
Power(W):
1862 W
Gain:
22.5 dB
Supply Voltage:
65 V
more info
Description:10 W Surface-Mount GaN HEMT from DC to 8 GHz
Application Industry:
Test & Measurement, Broadcast, Wireless Infrastruc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Package Type:
Flanged
Supply Voltage:
28 V
more info
Description:10 W, 2-Stage LDMOS Doherty Transistor MMIC from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1805 to 1880 MHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
26 V
Package:
21 Pin-LGA
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
20.2 dBm
Package Type:
Chip
Power(W):
0.1 W
Gain:
9.2 to 13.5 dB
Supply Voltage:
6 to 8 V
more info
MRFE6S9125N Image
Description:Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
44.31 dBm
Package Type:
Flanged
Power(W):
26.98 W
Supply Voltage:
28 V
Package:
CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC
more info
Description:DC to 20 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Package Type:
Flanged
Gain:
11.5 to 13.5 dB
Supply Voltage:
2 V
more info

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