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QPD1025

RF Transistor by Qorvo

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The QPD1025 from Qorvo is a discrete GaN on SiC HEMT that operates from 1.0 to 1.1 GHz. It provides a gain of 22.5 dB with a power added efficiency of 77.2%. This transistor has significantly better drain efficiency than LDMOS. It delivers an output power of 1800 W (P3dB) while operating on a 65 V supply. It is available in a standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Product Specifications

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Product Details

  • Part Number
    QPD1025
  • Manufacturer
    Qorvo
  • Description
    1800 Watt, GaN on SiC Discrete Transistor from 1 to 1.1 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Test & Measurement
  • Application
    Avionics, Test & Instrumentation
  • CW/Pulse
    CW, Pulse
  • Frequency
    1 to 1.1 GHz
  • Power
    62.7 dBm
  • Power(W)
    1862 W
  • Gain
    22.5 dB
  • Power Added Effeciency
    77.2 %
  • Supply Voltage
    65 V
  • Breakdown Voltage - Drain-Source
    225 V
  • Voltage - Drain-Source (Vdss)
    65 to 70 V
  • Voltage - Gate-Source (Vgs)
    -2.8 V
  • Drain Current
    28 A
  • Drain Bias Current
    1.5 A
  • Power Dissipation (Pdiss)
    496 to 685 W
  • RoHS
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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