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The QPD1025 from Qorvo is a discrete GaN on SiC HEMT that operates from 1.0 to 1.1 GHz. It provides a gain of 22.5 dB with a power added efficiency of 77.2%. This transistor has significantly better drain efficiency than LDMOS. It delivers an output power of 1800 W (P3dB) while operating on a 65 V supply. It is available in a standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
10 W Surface-Mount GaN HEMT from DC to 8 GHz
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
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