Note : Your request will be directed to Qorvo.
The QPD1025 from Qorvo is a discrete GaN on SiC HEMT that operates from 1.0 to 1.1 GHz. It provides a gain of 22.5 dB with a power added efficiency of 77.2%. This transistor has significantly better drain efficiency than LDMOS. It delivers an output power of 1800 W (P3dB) while operating on a 65 V supply. It is available in a standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
6 W RF Power GaN HEMT in a Plastic Package
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
SiGe:C NPN Heterojunction Bipolar Transistor
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