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QPD1025L

RF Transistor by Qorvo
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The QPD1025L from Qorvo is a RF Transistor with Frequency 0.915 to 1.2 GHz, Power 57.5 to 59.9 dBm, Power(W) 562.3 to 977.2 W, Saturated Power 62.7 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for QPD1025L can be seen below.

Product Specifications

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Product Details

  • Part Number
    QPD1025L
  • Manufacturer
    Qorvo
  • Description
    1800 W GaN RF Input-Matched Transistor from 0.915 to 1.2 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Radar View all
  • Application
    Avionics View all
  • CW/Pulse
    Pulse, CW
  • Frequency
    0.915 to 1.2 GHz
  • Power
    57.5 to 59.9 dBm
  • Power(W)
    562.3 to 977.2 W
  • Saturated Power
    62.7 dBm
  • Pulsed Width
    100 uS
  • Duty_Cycle
    0.1
  • Gain
    17.2 to 19.7 dB
  • Power Added Effeciency
    61.9 to 77.6%
  • Supply Voltage
    65 to 70 V (Drain)
  • Input Power
    46.2 dBm
  • Current
    1.5 A (Drain)
  • Drain Efficiency
    61.9 to 77.6%
  • Drain Current
    28 A
  • Quiescent Drain Current
    1.5 A
  • Power Dissipation (Pdiss)
    496 to 685 W
  • Package Type
    Flanged View all
  • RoHS
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
View details on the manufacturer's website
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