BFP740F Image

BFP740F

RF Transistor by Infineon Technologies (5 more products)

Note : Your request will be directed to Infineon Technologies.

The BFP740F from Infineon Technologies is a Wideband NPN RF Heterojunction Bipolar Transistor (HBT) with a transition frequency of 45 GHz. It provides an OIP3 of 24 dBm with a gain of 21 dB and a noise figure of 1 dB at 5.5 GHz. This transistor is available in a small form factor leadless surface-mount package and is ideal for wireless communications, satellite communication systems, multimedia, and ISM applications. The BFP740F is qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Product Specifications

    Product Details

    • Part Number :
      BFP740F
    • Manufacturer :
      Infineon Technologies
    • Description :
      RF Heterojunction Bipolar Transistor with 45 GHz Ft

    General Parameters

    • Transistor Type :
      HBT
    • Technology :
      SiGe:C
    • Application Industry :
      SATCOM, GNSS
    • Application :
      WiMax, WLAN, CATV, FM broadcast or TV channel
    • Frequency :
      Up to 75 GHz
    • fT :
      75 GHz
    • Power :
      6.5 to 8 dBm
    • Power(W) :
      0.0045 to 0.0063 W
    • P1dB :
      6.5 to 8 dBm
    • OIP3 :
      22.5 to 24.5 dB
    • Power Gain (Gp) :
      14 to 32 dB
    • Noise Figure :
      0.4 to 1.5 dB
    • Supply Voltage :
      3 V
    • Voltage - Collector Emitter (Vceo) :
      4 to 4.7 V
    • Current :
      15 mA
    • Lead Free :
      Yes
    • Impedance Zl :
      50 Ohms
    • Impedance Zs :
      50 Ohms
    • Junction Temperature (Tj) :
      150 Degree C
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

Click to view more product details on manufacturer's website  »

Featured Product

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.