RF Transistors - Aerospace & Defence

771 RF Transistors from 13 Manufacturers meet your specification.
Selected Filters Reset All
  • Application Industry: Aerospace & Defence
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
26 dBm
Package Type:
Chip
Power(W):
0.4 W
Gain:
9 to 14.5 dB
Supply Voltage:
8 V
more info
MRFE6VP100H Image
Description:Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--780--4
more info
Description:1.03 to 1.09 GHz, 300 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
18.5 dB
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.8 dBm
Package Type:
Flanged
Power(W):
23.99 W
Gain:
16 dB
Supply Voltage:
36 V
more info
Description:HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1 to 26.5 GHz
Power:
29 dBm
Package Type:
Chip
Power(W):
0.79 W
Gain:
8 to 13.5 dB
Supply Voltage:
8 V
more info
Description:420 to 470 MHz, 300 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
420 to 470 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
21 dB
Supply Voltage:
50 V
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
46.53 to 49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
20 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
WGB03006025F Image
Description:25 W, GaN on SiC Power Transistor from 3 to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3 to 6 GHz
Power:
43.97 dBm
Package Type:
Flanged
Power(W):
24.95 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 50 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
47 dBm
Power(W):
50.12 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type