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QPD0405

RF Transistor by Qorvo (97 more products)

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The QPD0405 from Qorvo is a Dual Path GaN RF Transistor that operates from 4.4 to 5 GHz. It provides a saturated output power of 22 watts (43.4 dBm) with a linear gain of 15.4 dB and has an efficiency of up to 75%. This transistor requires a DC voltage of 48 V and consumes 32.5 mA of current. It is manufactured using a GaN HEMT process and is available in a DFN package that measures 7 x 6.5 mm.

Product Specifications

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Product Details

  • Part Number
    QPD0405
  • Manufacturer
    Qorvo
  • Description
    Dual Path GaN RF Transistor from 4.4 to 5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application
    W-CDMA / LTE, Macrocell Base Station Driver, Microcell Base Station, Small Cell, Active Antenna, 5G Massive MIMO
  • Frequency
    4.4 to 5 GHz
  • Power
    43.42 dBm (Psat)
  • Power(W)
    22 W (Psat)
  • Gain
    15.4 dB
  • Supply Voltage
    48 V
  • Current
    32.5 mA
  • Drain Efficiency
    75 %
  • Lead Free
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimension
    7.0 x 6.5 mm
  • RoHS
    Yes
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