RF Transistors - Broadcast

574 RF Transistors from 19 Manufacturers meet your specification.
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  • Application Industry: Broadcast
Description:15.8 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
29.03 dBm
Package Type:
Surface Mount, Flanged
Power(W):
0.8 W
Gain:
18.2 dB
Supply Voltage:
48 V
more info
Description:800 W LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Radar, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
30 to 65 V
more info
Description:15 W GaN High Electron Mobility Transistor from DC to 6 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement, Wireless In...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Package:
SMT
more info
WG60028D Image
Description:GaN-on-SiC Dual-Output Transistor for Aerospace & Telecom Applications
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Technology:
GaN on SiC, GaN
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Surface Mount
Power(W):
28 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:28 dB, GaAs E-pHEMT RF Transistor from 100 MHz to 8 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure...
Transistor Type:
E-pHEMT
Technology:
GaAs
Frequency:
100 MHz to 8 GHz
Power:
26 dBm
Package Type:
Die
Power(W):
0.4 W
Gain:
28 dB
more info
Description:15 Watt, 0.03 to 1.2 GHz, GaN RF Input-Matched Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
18.4 dB
Supply Voltage:
12 to 55 V
Package:
6 x 5 mm
more info
Description:2500 W Pulsed LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Supply Voltage:
75 V
more info
Description:DC to 175 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Package Type:
Flanged
Gain:
14 dB
Supply Voltage:
12.5 V
more info
Description:RF Heterojunction Bipolar Transistor with 45 GHz Ft
Application Industry:
SATCOM, GNSS, Broadcast, Wireless Communication
Transistor Type:
HBT
Technology:
SiGe
Frequency:
Up to 75 GHz
Power:
6.5 to 8 dBm
Package Type:
Flanged
Power(W):
0.0045 to 0.0063 W
Supply Voltage:
3 V
more info
Description:56.2 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
40 dBm
Package Type:
Surface Mount, Flanged
Power(W):
10 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info

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