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BFR740L3RH

RF Transistor by Infineon Technologies

Note : Your request will be directed to Infineon Technologies.

The BFR740L3RH from Infineon is a SiGe:C NPN Heterojunction Bipolar Transistor (HBT). It provides a gain of 20 dB at 5.5 GHz and has a noise figure of 0.5 dB at 1.9 GHz. The transistor requires a supply voltage of 4 V and consumes less than 30 mA of current. It is available in a low profile and small form factor leadless package.

The BFR740L3RH is suitable for applications such as wireless communications (WLAN 2.4 GHz and 5-6 GHz bands, WiMax and UWB), satellite communication systems (Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB), multimedia (portable TV, CATV, FM Radio), ISM (RKE, AMR and Zigbee) as well as for emerging wireless applications.

Product Specifications

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Product Details

  • Part Number
    BFR740L3RH
  • Manufacturer
    Infineon Technologies
  • Description
    SiGe:C NPN Heterojunction Bipolar Transistor

General Parameters

  • Transistor Type
    HBT
  • Technology
    SiGe:C
  • Application Industry
    SATCOM
  • Application
    wireless communication, WiMax, GPS, ISM, Radio, CATV
  • Frequency
    150 MHz to 12 GHz
  • fT
    42 GHz
  • P1dB
    9 dBm
  • Power Gain (Gp)
    7 to 35 dB
  • Noise Figure
    0.45 to 27.5 GHz
  • Polarity
    NPN
  • Supply Voltage
    3 V
  • Collector Current (Ic)
    40 mA
  • Base Current (Ib)
    4 mA
  • Power Dissipation (Pdiss)
    160 mW
  • Package
    TSLP-3-9
  • Grade
    Commercial, Space Qualified
  • Storage Temperature
    -55 to 150 Degree C

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