RF Transistors - CW

1317 RF Transistors from 24 Manufacturers meet your specification.
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  • CW/Pulse: CW
Description:15.8 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
29.03 dBm
Package Type:
Surface Mount, Flanged
Power(W):
0.8 W
Gain:
18.2 dB
Supply Voltage:
48 V
more info
Description:DC to 3.6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.6 GHz
Power:
49.78 dBm
Package Type:
Surface Mount
Power(W):
95.06 W
Gain:
25 dB
Supply Voltage:
48 V
more info
Description:800 W LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Radar, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
30 to 65 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
25 dBm
Package Type:
Chip
Power(W):
0.32 W
Gain:
7.8 to 12.5 dB
Supply Voltage:
6 to 8 V
more info
Description:520 MHz, 6.5 W Silicon Power MOSFET for VHF/UHF Radio Applications
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
CW/Pulse:
CW
Frequency:
520 MHz
Power:
38.13 dBm
Package Type:
Surface Mount
Power(W):
6.5 W
more info
Description:RF Bipolar Transistor from DC to 12 GHz
Application Industry:
ISM, Radar, GNSS, Wireless Infrastructure, Wireles...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
DC to 12 GHz
Power:
11 dBm
Package Type:
Surface Mount
Power(W):
0.0126 W
Gain:
24.5 dB
Supply Voltage:
3 V
more info
Description:15 W GaN High Electron Mobility Transistor from DC to 6 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement, Wireless In...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Package:
SMT
more info
Description:63 W, LDMOS RF Transistor from DC to 945 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 945 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
63 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:Plastic Packaged GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
22 dBm
Package Type:
Surface Mount, PCB Mount
Power(W):
0.16 W
Supply Voltage:
5 to 7 V
Package:
plastic
more info

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