RF Transistors - Die

166 RF Transistors from 9 Manufacturers meet your specification.
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  • Package Type: Die
Description:28 dB, GaAs E-pHEMT RF Transistor from 100 MHz to 8 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure...
Transistor Type:
E-pHEMT
Technology:
GaAs
Frequency:
100 MHz to 8 GHz
Power:
26 dBm
Package Type:
Die
Power(W):
0.4 W
Gain:
28 dB
more info
Description:4 W GaN on SiC RF Power Transistor from 2 to 12 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2 to 12 GHz
Package Type:
Die
Supply Voltage:
30 V
more info
Description:5.6 dB, GaAs pHEMT RF Transistor Up to 40 GHz
Application Industry:
Test & Measurement, Radar, Commercial, Military, W...
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
Up to 40 GHz
Package Type:
Die
Gain:
5.6 dB
more info
Description:6 dB, GaAs pHEMT RF Transistor Up to 40 GHz
Application Industry:
Test & Measurement, Radar, Commercial, Military, W...
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
Up to 40 GHz
Package Type:
Die
Gain:
6 dB
more info
Description:20 W GaN on SiC HEMT from DC to 7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 7 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Gain:
15.2 to 17.2 dB
Supply Voltage:
50 V
more info
Description:30 W, 8.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Supply Voltage:
10 V
more info
Description:20 W, GaN HEMT Transistor form DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
0.1 dBm
Package Type:
Die
Power(W):
0.001 W
Supply Voltage:
50 V
more info
Description:21 dB, GaAs E-pHEMT RF Transistor from 100 MHz to 8 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure...
Transistor Type:
E-pHEMT
Technology:
GaAs
Frequency:
100 MHz to 8 GHz
Power:
26 dBm
Package Type:
Die
Power(W):
0.4 W
Gain:
21 dB
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info

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