RF Transistors - ISM

391 RF Transistors from 11 Manufacturers meet your specification.
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  • Application Industry: ISM
Description:300 Watt GaN Power Transistor from 910 to 920 MHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
910 to 920 MHz
Power:
55.9 dBm
Package Type:
Surface Mount
Power(W):
330 W
Gain:
17.1 to 18 dB
Supply Voltage:
50 V
more info
Description:RF Bipolar Transistor from DC to 12 GHz
Application Industry:
ISM, Radar, GNSS, Wireless Infrastructure, Wireles...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
DC to 12 GHz
Power:
11 dBm
Package Type:
Surface Mount
Power(W):
0.0126 W
Gain:
24.5 dB
Supply Voltage:
3 V
more info
Description:2500 W Pulsed LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Supply Voltage:
75 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
MRF1K50N Image
Description:Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, ISM
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 500 MHz
Power:
61.53 dBm
Package Type:
Flanged
Power(W):
1422.33 W
Supply Voltage:
50 V
Package:
OM--1230--4L PLASTIC
more info
Description:Surface Mount High Linearity Silicon NPN RF Bipolar Transistor
Application Industry:
Wireless Infrastructure, ISM, Wireless Communicati...
Transistor Type:
Bipolar
Technology:
SiGe
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
14.5 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.3 V
Package:
SOT343
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 150 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
15 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:180 W, LDMOS RF Transistor from 2.3 to 2.5 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.3 to 2.5 GHz
Power:
52.553 dBm
Package Type:
Flanged
Power(W):
180 W
Supply Voltage:
32 V
more info
Description:RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 40 MHz
Power:
58.75 dBm
Package Type:
Die
Power(W):
749.89 W
Supply Voltage:
300 V
Package:
T1
more info
GTH2e-2425300P Image
Description:300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz
Application Industry:
ISM, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2400 to 2500 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
17 dB
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.1 to 1.3 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
8 dB
Supply Voltage:
32 V
Package:
Flange Ceramic
more info

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