RF Transistors - FET

216 RF Transistors from 8 Manufacturers meet your specification.
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  • Transistor Type: FET
Description:20 GHz Low Noise FET in Dual Mold Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
20 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
4-pin thin Plastic
more info
Description:GaAs FET for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
22 dBm
Package Type:
Chip
Power(W):
0.16 W
Supply Voltage:
6 to 7 V
more info
Description:12 GHz Super Low Noise FET in Hollow Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
Micro-X plastic
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
25.5 dBm
Power(W):
0.35 W
more info
Description:20 GHz Super Low Noise FET in Hollow Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
20 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
Micro-X plastic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
46 to 47 dBm
Package Type:
Flanged
Power(W):
39.81 to 50.12 W
Package:
IB
more info
Description:12GHz Low Noise FET in Dual Mold Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
4-pin thin Plastic
more info
Description:GaAs FET from 5.3 to 5.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.3 to 5.9 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IB
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
38.5 to 39 dBm
Package Type:
Flanged
Power(W):
7.08 to 7.94 W
more info
WG35165S Image
Description:165 W, GaN on SiC Power transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Supply Voltage:
48 V
Package:
Flanged
more info

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