RF Transistors - 2-Hole Flanged

49 RF Transistors from 6 Manufacturers meet your specification.
Selected Filters Reset All
  • Package Type: 2-Hole Flanged
Description:25 W Unmatched GaN Transistor from DC to 5 GHz
Application Industry:
Cellular, Radar, Test & Measurement, Wi-Fi / Bluet...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 5 GHz
Power:
43.98 to 45.4 dBm
Package Type:
Surface Mount, 2-Hole Flanged
Power(W):
25 to 34.67 W (Psat)
Supply Voltage:
28 V
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
50 dBm
Package Type:
2-Hole Flanged
Power(W):
100 W
Supply Voltage:
12.5 V
Package:
M174
more info
Description:RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
50 dBm
Package Type:
2-Hole Flanged
Power(W):
100 W
Supply Voltage:
12.5 V
Package:
M111
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
53.98 dBm
Package Type:
2-Hole Flanged
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
M177
more info
Description:8 W GaN HEMT Transistor from DC to 18 GHz
Application Industry:
Radar, SATCOM, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 18 GHz
Power:
36.02 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
more info
Description:3 Watts - 28 Volts, Class C Microwave 3000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 3 GHz
Power:
34.77 dBm
Package Type:
2-Hole Flanged
Power(W):
3 W
Supply Voltage:
28 V
Package:
55BT-1
more info
Description:25 W Unmatched GaN Transistor from DC to 5 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 5 GHz
Power:
43.98 to 45.4 dBm
Package Type:
Surface Mount, 2-Hole Flanged
Power(W):
25 to 34.67 W (Psat)
Supply Voltage:
28 V
more info
Description:8 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
39.03 dBm
Package Type:
2-Hole Flanged
Power(W):
8 W
Supply Voltage:
26.5 V
Package:
55JV-2
more info
Description:800 W LDMOS Power Transistor from 400 to 800 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 to 800 MHz
Power:
58.75 to 59.03 dBm
Package Type:
2-Hole Flanged
Power(W):
750 to 800 W (P1dB)
Supply Voltage:
50 V
Package:
4 Leads Ceramic
more info
Description:20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
43.01 dBm
Package Type:
2-Hole Flanged
Power(W):
20 W
Supply Voltage:
26.5 V
Package:
55JV-2
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type