RF Transistors - 2-Hole Flanged

49 RF Transistors from 6 Manufacturers meet your specification.
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  • Package Type: 2-Hole Flanged
Description:25 W Unmatched GaN Transistor from DC to 5 GHz
Application Industry:
Cellular, Radar, Test & Measurement, Wi-Fi / Bluet...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 5 GHz
Power:
43.98 to 45.4 dBm
Package Type:
Surface Mount, 2-Hole Flanged
Power(W):
25 to 34.67 W (Psat)
Supply Voltage:
28 V
more info
QPD1425L Image
Description:300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
Application Industry:
Radar, Military, Broadcast, Communication, Test & ...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1200 to 1400 MHz
Power:
55 dBm (Psat)
Package Type:
2-Hole Flanged
Power(W):
300 W (Psat)
Supply Voltage:
65 V
more info
Description:50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
500 MHz to 1 GHz
Power:
46.99 dBm
Package Type:
2-Hole Flanged
Power(W):
50 W
Supply Voltage:
28 V
Package:
55AV-2
more info
Description:20 Watts, 36 Volts, 200µs, 10% Radar 1480 to 1650 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.48 to 1.65 GHz
Power:
43.01 to 44.77 dBm
Package Type:
2-Hole Flanged
Power(W):
29.99 W
Supply Voltage:
36 V
Package:
55LV
more info
IGN1313S3600 Image
Description:3.2 kW, GaN RF Transistor from DC to 1.3 GHz
Technology:
GaN
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
65.05 dBm
Package Type:
2-Hole Flanged
Power(W):
3.2 kW
Supply Voltage:
100 V
more info
Description:8 W GaN HEMT Transistor from DC to 18 GHz
Application Industry:
Radar, SATCOM, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 18 GHz
Power:
36.02 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
more info
Description:1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
1 to 2 GHz
Power:
30 dBm
Package Type:
2-Hole Flanged
Power(W):
1 W
Supply Voltage:
28 V
Package:
M210
more info
Description:7.0 Watts - 20 Volts, Class C Microwave 2300 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2.3 GHz
Power:
38.45 dBm
Package Type:
2-Hole Flanged
Power(W):
7 W
Supply Voltage:
20 V
Package:
55BT-1
more info
Description:1.03 GHz GaN-on-SiC Power Transistor for Avionics Applications
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1030 MHz
Power:
65.56 dBm
Package Type:
2-Hole Flanged
Power(W):
3600 W
Gain:
18 to 22 dB
Supply Voltage:
100 V
more info
Description:RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
44.77 dBm
Package Type:
2-Hole Flanged
Power(W):
29.99 W
Supply Voltage:
12.5 V
Package:
M113
more info

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