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BLU9H0408L-800P

RF Transistor by Ampleon (268 more products)

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The BLU9H0408L-800P from Ampleon is an LDMOS Power Transistor that operates from 400 to 800 MHz. It delivers a typical P1dB of 800 W with a gain of more than 19.5 dB and has a drain efficiency of up to 70.4%. The transistor uses Ampleon’s latest Gen9 (50V) LDMOS process technology and is designed for UHF radar applications. It supports long pulse lengths and high duty cycles required by modern radars, and at the same time provides excellent reliability. The BLU9H0408L-800P is available in a rugged flanged balanced ceramic package that measures 41.28 x 17.12 x 4.7 mm and has integrated dual sided ESD protection.

Product Specifications

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Product Details

  • Part Number
    BLU9H0408L-800P
  • Manufacturer
    Ampleon
  • Description
    800 W LDMOS Power Transistor from 400 to 800 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Application Industry
    Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    400 to 800 MHz
  • Power(W)
    750 to 800 W (P1dB)
  • Pulsed Width
    100 us
  • Power Gain (Gp)
    19.5 to 21.9 dB
  • Input Return Loss
    7 dB
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.5 to 2.5 V
  • Breakdown Voltage - Drain-Source
    108 V
  • Current
    1300 mA
  • Drain Efficiency
    64 to 70.4 %
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    2-Hole Flange
  • Package
    4 Leads Ceramic
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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