APN318

Note : Your request will be directed to Northrop Grumman.

APN318 Image

The APN318 from Northrop Grumman is a three-stage Power/Driver Amplifier that operates from 47.2 to 51.4 GHz. It delivers a saturated pulsed output power of 8 W (~39 dBm), a saturated CW output power of 3 W with a gain of over 12 dB. The amplifier utilizes GaN-based HEMTs and has a Power Added Efficiency of up to 11.5%. It requires a DC supply of 28 V and consumes 1.62 A of current. The amplifier is available as a die that measures 3.2 x 2.0 mm with Au-based bond pads and backside metallization. It is compatible with epoxy and eutectic die attach methods. This amplifier is ideal for 5G wireless, IoT, and SATCOM terminals applications.

Product Specifications

View similar products

Product Details

  • Part Number
    APN318
  • Manufacturer
    Northrop Grumman
  • Description
    8 W GaN Power/Driver Amplifier from 47.2 to 51.4 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    5G
  • Standards Supported
    5G
  • Industry Application
    Cellular, IoT, SATCOM, Wireless Infrastructure
  • Frequency
    47.2 to 51.4 GHz
  • Gain
    12 to 16 dB
  • Saturated Power
    27.5 to 39 dBm
  • Saturated Power
    0.5623 to 7.9433 W
  • PAE
    11.5 to 13 %
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    -30 to -12 dB
  • Output Return Loss
    -25 to -11.5 dB
  • Supply Voltage
    20 to 28 V
  • Technology
    GaN on SiC HEMT
  • Dimensions
    6.4 mm2

Technical Documents