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APN311

RF Amplifier by Northrop Grumman
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The APN311 from Northrop Grumman is a RF Amplifier with Frequency 27 to 31 GHz, Gain 19 to 20 dB, P1dB 43 dBm, P1dB 19.95 W, Saturated Power 44 to 45 dBm. Tags: Chip, Power Amplifier. More details for APN311 can be seen below.

Product Specifications

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Product Details

  • Part Number
    APN311
  • Manufacturer
    Northrop Grumman
  • Description
    GaN Power Amplifier from 27 to 31 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT, Die
  • Application
    Point-to-Point, Point-to-Multipoint
  • Standards Supported
    Ka Band View all
  • Industry Application
    SATCOM, Broadcast
  • Frequency
    27 to 31 GHz
  • Gain
    19 to 20 dB
  • P1dB
    43 dBm
  • P1dB
    19.95 W
  • Saturated Power
    44 to 45 dBm
  • Saturated Power
    25.11 to 31.62 W
  • PAE
    30%
  • Pulsed/CW
    Pulsed View all
  • Sub-Category
    GaN Amplifier, Pulsed Amplifier
  • Return Loss
    5 to 12 dB
  • Input Return Loss
    5 to 12 dB
  • Output Return Loss
    5 to 10 dB
  • Supply Voltage
    20 to 28 V
  • Current Consumption
    830 to 1860 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN
  • Package Type
    Chip View all
  • Dimensions
    13.52 sq.mm

Technical Documents
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