APN386

The APN386 from Northrop Grumman is a 4-Stage GaN Power Amplifier (PA) that operates from 71 to 76 GHz. It is fabricated on a 0.15 µm GaN HEMT process with a 3 mil SiC substrate, and is designed for use in backhaul systems. This PA delivers a saturated output power of 4 W, with a small-signal gain of 20 dB and a power-added efficiency (PAE) of 15.5%. It requires a DC supply from 20 V and consumes less than 0.64 A of drain current. 

The APN386 power amplifier is available as a bare die measuring 4.2 x 3.6 mm. It features Au-based bond pads and backside metallization compatible with epoxy and eutectic die attachment. This GaN HEMT PA is ideal for E-band communication systems, enterprise wireless LAN, wireless fiber replacement, short haul/high-capacity links, and terrestrial/space-based backhaul applications.