The BGS8M2UK from NXP Semiconductors is a RF Amplifier with Frequency 1.805 to 2.2 GHz, Gain 15.4 to 15.5 dB, Noise Figure 0.75 dB, P1dB -3.5 dBm, P1dB 0.0004 W. Tags: Surface Mount, Low Noise Amplifier. More details for BGS8M2UK can be seen below.

Product Specifications

    Product Details

    • Part Number :
      BGS8M2UK
    • Manufacturer :
      NXP Semiconductors
    • Description :
      SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

    General Parameters

    • Type :
      Low Noise Amplifier
    • Configuration :
      IC/MMIC/SMT
    • Standards Supported :
      LTE
    • Industry Application :
      Cellular
    • Frequency :
      1.805 to 2.2 GHz
    • Gain :
      15.4 to 15.5 dB
    • Noise Figure :
      0.75 dB
    • P1dB :
      -3.5 dBm
    • P1dB :
      0.0004 W
    • IP3 :
      2.5 dBm
    • IP3 :
      0.001 W
    • Input Power :
      10 dBm
    • Input Power :
      0.01 W
    • Return Loss :
      5.5 to 13 dB
    • Output Return Loss :
      11 to 12.5 dB
    • Supply Voltage :
      1.5 to 3.1 V
    • Current Consumption :
      5.8 mA
    • Technology :
      SiGe
    • Package Type :
      Surface Mount
    • Package :
      SOT1445-1
    • Dimensions :
      0.69 mm x 0.44 mm x 0.2 mm

    Technical Documents

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