The BGU8063 from NXP Semiconductors is a RF Amplifier with Frequency 2.5 to 4 GHz, Power Gain 18.5 dB, Gain Flatness ± 0.3 to 0.4 dB, Noise Figure 1.4 dB, P1dB 17.5 to 19 dBm. Tags: Surface Mount, Low Noise Amplifier, Variable Gain Amplifier. More details for BGU8063 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BGU8063
  • Manufacturer
    NXP Semiconductors
  • Description
    Low noise high linearity amplifier

General Parameters

  • Type
    Low Noise Amplifier, Variable Gain Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Commercial, Small cell
  • Standards Supported
    LTE, WCDMA, CDMA, GSM
  • Industry Application
    Wireless Infrastructure, Cellular
  • Frequency
    2.5 to 4 GHz
  • Power Gain
    18.5 dB
  • Gain Flatness
    ± 0.3 to 0.4 dB
  • Noise Figure
    1.4 dB
  • P1dB
    17.5 to 19 dBm
  • P1dB
    0.05 to 0.07 W
  • IP3
    38.1 dBm
  • IP3
    2.51 W
  • Input Power
    20 dBm
  • Input Power
    0.1 W
  • Power Dissipation
    100 mW
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    10 dB
  • Output Return Loss
    10 dB
  • Transistor Technology
    GaAs, PHEMT, SiGe:C
  • Technology
    GaAs, PHEMT, SiGe:C
  • Package Type
    Surface Mount
  • Package
    SOT650-2
  • Storage Temperature
    -40 to 150 Degree C

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