The MMRF2010N/GN LDMOS NXP Semiconductors is 250 W, 50 V amplifier operating from 1030 to 1090 MHz. It has an integrated quiescent current temperature compensation with enable/disable function and an Integrated ESD protection.
It has a VSWR of >10:1at all phase angles, Gain of 32.1 dB and a drain efficiency of 61.4%.
This device comes in an over-moulded plastic packaging. These devices can be used for applications such as IFF and secondary radar transponders.