The MMRF2010N/GN LDMOS NXP Semiconductors is 250 W, 50 V amplifier operating from 1030 to 1090 MHz. It has an integrated quiescent current temperature compensation with enable/disable function and an Integrated ESD protection. It has a VSWR of 10:1at all phase angles, Gain of 32.1 dB and a drain efficiency of 61.4%. This device comes in an over-moulded plastic packaging. These devices can be used for applications such as IFF and secondary radar transponders.

Product Specifications

  • Part Number
    MMRF2010N/GN
  • Manufacturer
    NXP Semiconductors
  • Description
    250 Watt, 1030 to 1090 MHz LDMOS Amplifier
  • Type
  • Configuration
    IC/MMIC/SMT
  • Application
    Point-to-Point, Radio
  • Frequency
    1030 to 1090 MHz
  • Gain
    30.1 to 32.5 dB
  • Impedance
    50 Ohms
  • Supply Voltage
    50 V
  • Technology
    LDMOS
  • Package Type
    Chip
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