TGA2307

RF Amplifier by Qorvo

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TGA2307 Image

The TGA2307 from Qorvo is a GaN MMIC Power Amplifier (PA) that operates from 5.0 to 6.0 GHz. It delivers a saturated output power of more than 47 dBm (~50 W) with a large-signal gain of more than 20 dB and a power-added efficiency greater than 40 %. This PA is fabricated using Qorvo's 0.25 µm GaN-on-Silicon Carbide (SiC) technology and has 50-ohm impedance-matched RF input and output ports with integrated DC blocking capacitors. It is biased using a 28 V drain supply and consumes less than 1000 mA of quiescent drain current. 

The TGA2307 is available as a bare die measuring 4.280 × 4.260 × 0.100 mm and is well-suited for C-band radar and SATCOM applications.

Product Specifications

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Product Details

  • Part Number
    TGA2307
  • Manufacturer
    Qorvo
  • Description
    50 W GaN MMIC Power Amplifier from 5.0 to 6.0 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT, Die
  • Standards Supported
    C Band View all
  • Industry Application
    Commercial, Military, Radar, SATCOM
  • Frequency
    5 to 6 GHz
  • Gain
    20 to 26 dB
  • Small Signal Gain
    24.3 to 26 dB
  • Output Power
    47 to 47.6 dBm
  • Output Power
    50.12 to 57.54 W
  • Grade
    Commercial, Military
  • Saturated Power
    47 dBm
  • Saturated Power
    50.1 W
  • Input Power
    33 dBm
  • Input Power
    2 W
  • Power Dissipation
    96 W
  • PAE
    42.1 to 45.7%
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Sub-Category
    GaN Amplifier View all
  • Return Loss
    8 to 26 dB
  • Input Return Loss
    22 to 26 dB
  • Output Return Loss
    8 to 10 dB
  • Supply Voltage
    28 V (Drain)
  • Quiscent Current
    1000 mA
  • Package Type
  • Dimensions
    4.280 x 4.260 x 0.100 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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