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RAMP18M66MSA

RF Amplifier by RF-Lambda
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The RAMP18M66MSA from RF-Lambda is a RF Amplifier with Frequency 180 to 660 MHz, Gain 23 to 28 dB, Gain Flatness ±0.5 to 1.5 dB, Noise Figure 0.3 to 0.8 dB, P1dB 20 to 23 dBm. Tags: Benchtop / Rackmount, Low Noise Amplifier. More details for RAMP18M66MSA can be seen below.

Product Specifications

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Product Details

  • Part Number
    RAMP18M66MSA
  • Manufacturer
    RF-Lambda
  • Description
    Wide Band Low Noise Amplifier from 180MHz-660MHz

General Parameters

  • Type
    Low Noise Amplifier View all
  • Configuration
    System View all
  • Application
    Wireless Communication, Radio, Research and Development, Instrumentation, Base Station
  • Standards Supported
    5G View all
  • Industry Application
    Wireless Infrastructure, Military, Aerospace & Defense, Radar, Cellular, Broadcast
  • Frequency
    180 to 660 MHz
  • Gain
    23 to 28 dB
  • Gain Flatness
    ±0.5 to 1.5 dB
  • Noise Figure
    0.3 to 0.8 dB
  • P1dB
    20 to 23 dBm
  • P1dB
    0.1 to 0.19 W
  • Grade
    Military, Space
  • IP3
    36 dBm
  • IP3
    3.98 W
  • Saturated Power
    24 dBm
  • Saturated Power
    0.25 W
  • Impedance
    50 Ohms View all
  • Pulsed/CW
    CW View all
  • Reverse Isolation
    -30 dB (Isolation)
  • Input VSWR
    1.50:1, 2.20:1
  • Output VSWR
    1.60:1, 2.20:1
  • Sub-Category
    GaN Amplifier View all
  • AC Voltage
    110 to 220 V
  • Current Consumption
    115 to 150 mA
  • Technology
    GaN
  • Package Type
    Benchtop / Rackmount View all
  • Package
    Epoxy Sealed
  • Input Connector
    SMA - Female
  • Output Connector
    SMA - Female
  • Weight
    0.02 lbs
  • Cooling Options
    Integrated Heat Sink and Fan
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -50 to 105 Degree C
  • Note
    Gain Variation Over Temperature: 0.5 dB

Technical Documents
View details on the manufacturer's website
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