REMC0M3GW100

RF Amplifier by RF-Lambda

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REMC0M3GW100 Image

The REMC0M3GW100 from RF-Lambda is a RF Amplifier with Frequency 0.02 to 3 GHz, Small Signal Gain 50 to 55 dB, Gain Flatness ±2 to ±3 dB, P1dB 48 to 49 dBm, P1dB 63.1 to 79.43 W. Tags: Benchtop / Rackmount, Power Amplifier. More details for REMC0M3GW100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    REMC0M3GW100
  • Manufacturer
    RF-Lambda
  • Description
    Wideband EMC Configurable Dual Band Power Amplifier from 0.02 to 3 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    System View all
  • Application
    Test Equipment, Base Station, EMC, Wireless Communication, Research and Development
  • Standards Supported
    5G, Radio
  • Industry Application
    Wireless Infrastructure, Military, Aerospace & Defense, Radar, Cellular, Broadcast
  • Frequency
    0.02 to 3 GHz
  • Small Signal Gain
    50 to 55 dB
  • Gain Flatness
    ±2 to ±3 dB
  • P1dB
    48 to 49 dBm
  • P1dB
    63.1 to 79.43 W
  • Grade
    Military, Space
  • Saturated Power
    49.5 to 51 dBm
  • Saturated Power
    89.13 to 125.89 W
  • PAE
    0.2
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Input VSWR
    2.00:1
  • Sub-Category
    GaN Amplifier, SSPA
  • AC Voltage
    90 to 264 VAC
  • Current Consumption
    2 to 5 A
  • Technology
    GaN
  • Package Type
    Benchtop / Rackmount View all
  • Input Connector
    N Type - Female
  • Output Connector
    N Type - Female
  • Interface
    USB, LAN
  • Weight
    63.7 lbs
  • Operating Temperature
    0 to 50 Degree C
  • Storage Temperature
    -40 to 85 Degree C
  • Certifications
    MIL-STD-202G, MIL-STD-883

Technical Documents