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RLNA00M65GJ

RF Amplifier by RF-Lambda
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The RLNA00M65GJ from RF-Lambda is a RF Amplifier with Frequency 0 to 65 GHz, Gain 12.40 dB, Gain Flatness ±1 dB, Noise Figure 3.80 dB, P1dB 17.20 dBm. Tags: Low Noise Amplifier. More details for RLNA00M65GJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    RLNA00M65GJ
  • Manufacturer
    RF-Lambda
  • Description
    Wide Band Low Noise Amplifier from 0 to 65 GHz

General Parameters

  • Type
    Low Noise Amplifier View all
  • Configuration
    Module with Connector View all
  • Application
    Wireless Communication, Research and Development, Base Station, Radio
  • Standards Supported
    5G View all
  • Industry Application
    Wireless Infrastructure, Aerospace & Defense, Military, Test & Measurement, Radar, Broadcast, Cellular
  • Frequency
    0 to 65 GHz
  • Gain
    12.40 dB
  • Gain Flatness
    ±1 dB
  • Noise Figure
    3.80 dB
  • P1dB
    17.20 dBm
  • P1dB
    0.052 W
  • Grade
    Space, Military
  • IP3
    27.2 dBm
  • Saturated Power
    18.2 dBm
  • Saturated Power
    0.066 W
  • Input Power
    8 dBm
  • Impedance
    50 Ohms View all
  • Pulsed/CW
    CW View all
  • Input VSWR
    2.00:1
  • Output VSWR
    2.00:1
  • Supply Voltage
    12 V
  • Current Consumption
    110 mA
  • Package
    Epoxy Sealed
  • Input Connector
    1.85 mm - Female
  • Output Connector
    1.85 mm - Female
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -50 to 105 Degree C
  • Certifications
    MIL-STD-202G, MIL-STD-883
  • Note
    Gain Variation: ±1 dB

Technical Documents
View details on the manufacturer's website
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