Note : Your request will be directed to RFHIC.

HM0225-05B Image

The HM0225-05B from RFHIC is a GaN Hybrid Power Amplifier that operates from 200 to 2500 MHz. It delivers an output power of over 37 dBm with a power gain of more than 33 dB and a power added efficiency of over 31%. This dual-stage amplifier has an IMD of -25 dBc and an input return loss of -10 dB. It is based on GaN-on-SiC HEMT technology and has a metal lid and an AlN-board for thermal dissipation. This hybrid amplifier requires a DC supply of 8 or 24 V, and consumes less than 250 mA of current. It is available in a surface-mount package that measures 21.1 x 10.6 x 2.5 mm. This amplifier is ideal for radio systems, SDR (Software Defined Radio), TRS (Trunked Radio Service), and other communication applications.

Product Specifications

View similar products

Product Details

  • Part Number
    HM0225-05B
  • Manufacturer
    RFHIC
  • Description
    GaN Hybrid Power Amplifier from 200 to 2500 MHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Standards Supported
    Radio View all
  • Industry Application
    Electronic Warfare, Military, Jamming, Broadcast, Aerospace & Defense
  • Frequency
    200 MHz to 2.5 GHz
  • Gain
    34 dB
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Sub-Category
    Hybrid Amplifier, GaN Amplifier
  • Supply Voltage
    24 V
  • Technology
    SiC HEMT
  • Package Type
    Surface Mount View all
  • Package
    NP-1A
  • Dimensions
    21.1 x 10.6 x 2.5 mm
  • Weight
    2 g
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 100 Degree C
  • RoHS
    Yes
  • Note
    idd : 670 mA

Technical Documents