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RIM132K0-20

RF Amplifier by RFHIC | Visit website (258 more products)

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The RIM132K0-20 from RFHIC is a Solid-State GaN Power Amplifier that operates from 1295 to 1305 MHz. It provides up to 2000 W of output power with a gain of 53 dB and has an efficiency of 65%. It can handle up to 10 dBm of input power and requires 50 VDC supply voltage. The amplifier is designed using GaN-on-SiC transistors and provides excellent thermal stability. It is available in a rugged module that measures 360 x  200 x 46 mm with SMA-Female connectors and is suitable for  medical, high power industries, microwave CVD reactors, plasma  generators, food science and MW heating/drying applications.

Product Specifications

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Product Details

  • Part Number
    RIM132K0-20
  • Manufacturer
    RFHIC
  • Description
    2000 W Solid-State GaN Power Amplifier from 1295 to 1305 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    ISM, Plasma Generator
  • Frequency
    1.2 to 1.3 GHz
  • Gain
    53 dB
  • Power Gain
    53 dB
  • Gain Flatness
    1 to 2 dB
  • Output Power
    63.01 dBm
  • Output Power
    2000 W
  • Output Power CW
    2000 W
  • Input Power
    10 dBm
  • Input Power
    0.01 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    SSPA, GaN Amplifier
  • Return Loss
    -15 dB
  • Output Return Loss
    -15 dB
  • Supply Voltage
    50 V
  • Transistor Technology
    GaN on SiC
  • Technology
    GaN HEMT
  • Dimensions
    360 x 260 x 46 mm (L x W x H)
  • Connectors
    SMA, SMA - Female, 7/16 DIN, 7/16 DIN - Female
  • Input Connector
    SMA - Female
  • Output Connector
    7/16 DIN - Female
  • DC Connectors
    3W3 & D-sub 2 array 15pin
  • Weight
    6 Kg
  • Cooling Options
    Water Cooling
  • RoHS
    Yes
  • Note
    Drain Efficiency : 65%

Technical Documents

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