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RRP131K0-10 Image

The RRP131K0-10 from RFHIC is a GaN Pulsed Power Amplifier (PA) that operates from 1.2 to 1.4 GHz. It delivers an output power of 1.2 kW (pulse width < 500 µs) with a power gain of 54 dB and a gain flatness of ±1.0 dB. This SSPA is fabricated using RFHIC’s GaN HEMT technology, which provides high breakdown voltage, wider bandwidth, and high efficiency. It is fully matched to 50 Ohms, resulting in greater system integration.

The RRP131K0-10 has spurious levels of better than 60 dBc and harmonic levels of 30 dBc. This GaN power amplifier requires a DC supply of 50 V and consumes less than 16 A of current. It is available in a module that measures 250 x 150 x 28 mm and has an SMA (female) connector at the input & an N-type (female) connector at the output port. It is designed for use in radar system applications.

Product Specifications

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Product Details

  • Part Number
    RRP131K0-10
  • Manufacturer
    RFHIC
  • Description
    1.2 kW GaN Pulsed Power Amplifier Module from 1.2 to 1.4 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    Module with Connector View all
  • Industry Application
    Radar View all
  • Frequency
    1.2 to 1.4 GHz
  • Power Gain
    53 to 54 dB
  • Gain Flatness
    ± 1 dB
  • Input Power
    7 to 10 dBm
  • Input Power
    0.01 W
  • Impedance
    50 Ohms View all
  • Pulsed/CW
    Pulsed View all
  • Rise Time
    200 ns
  • Fall Time
    200 ns
  • Harmonics
    30 dBc
  • Spurious
    60 dBc
  • Supply Voltage
    50 V
  • Transistor Technology
    HEMT
  • Technology
    GaN
  • Dimensions
    250 x 150 x 28 mm
  • Weight
    1.3 Kg

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