The SKY67216-11 LNA is comprised of a single stage high linearity, high gain low noise GaAs pHEMT amplifier integrated with all required matching components, greatly reducing PCB area and offering low thermal resistance for enhanced mean time between failure (MTBF). The module is completely DC bypassed and is realized in a 4x4 mm2 16-pin Skyworks Green Multi-Chip Module package. The LNAs internal active bias circuitry provides stable performance over wide temperature range. The advanced GaAs pHEMT enhancement mode process also provides excellent mid band return loss (18 dB), high gain (19 db), high linearity (35.5 dBm OIP3) coupled with very low noise figure (0.6 db). The modules only external component is utilized to adjust the supply current over a range of 30 to 100 ma and the device can also be operated over a 3.3 to 5V input voltage range. The SKY67216-11 is specified over a broad frequency range of 0.5 to 1.2 GHz and a standard evaluation board is available. For lower frequency operation (0.4 &ndash 0.7 GHz), the pin-compatible SKY67215-11 should be used. For higher frequency operation (1.6 &ndash 2.1 GHz) the pin-compatible SKY67221-11 should be used, and for (2.1 &ndash 3.0 GHz) the pin compatible SKY67226-11 is the recommended solution. Samples are available upon request. Applications include Femto & Pico Cells, Cellular Signal Boosters, In Building Wireless systems, White Space and ISM Band Transceivers.