X band Cryo LNA

RF Amplifier by Celestia TTI

Note : Your request will be directed to Celestia TTI.

X band Cryo LNA Image

The X band Cryo LNA from Celestia TTI is an X-band Cryogenic LNA that operates from 8 to 9 GHz. It delivers a gain of 38 to 40 dB with a gain flatness of up to 1.5 dB pp and has an output P1dB of -20 dBm to 5 dBm. This LNA has reverse isolation of less than -45 dB and a return loss of less than -10 dB (input/output). It is based on a combination of Indium Phosphide (InP) and Gallium Arsenide (GaAs) technologies to deliver exceptionally low Noise Temperature (NT) of 2 to 15 K (-271.15 to -258.15 °C). It requires a drain voltage of 0 V to 3.5 V and consumes less than 65 mW of power. This LNA is available in a compact and lightweight module that measures 50.6 x 32 x 10.5 mm and has SMA male/female connectors.

Product Specifications

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Product Details

  • Part Number
    X band Cryo LNA
  • Manufacturer
    Celestia TTI
  • Description
    X-band Cryogenic LNA from 8 to 9 GHz

General Parameters

  • Type
    Cryogenic Amplifier, Low Noise Amplifier
  • Configuration
    Module with Connector View all
  • Display Application
    Radioastronomy & Quantum Computing
  • Frequency
    8 to 9 GHz
  • Gain
    38 to 40 dB
  • Gain Flatness
    1.5 dBp-p
  • IP3
    10 dBm
  • IP3
    0.01 W
  • Saturated Power
    -20 to 5 dBm
  • Power Consumption
    =65 mW
  • Impedance
    50 Ohms View all
  • Reverse Isolation
    -45 dB
  • Return Loss
    10 dB
  • Supply Voltage
    0 to 3.5 V
  • Current Consumption
    30 mA
  • Technology
    InP/GaAs
  • Dimensions
    50.6 x 32 x 10.5 mm
  • Connectors
    SMA, SMA - Male, SMA - Female
  • DC Connectors
    Nano D 9-P
  • Weight
    44 g
  • Operating Temperature
    2 to 15 Kelvin
  • Note
    Noise Temperature:<4 K at 12 K

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