CHA4350-QDG

Note : Your request will be directed to United Monolithic Semiconductors.

The CHA4350-QDG from United Monolithic Semiconductors is a RF Amplifier with Frequency 5.5 to 11.7 GHz, Gain 26 dB, Noise Figure 5.5 dB, P1dB 24 dBm, P1dB 0.25 W. Tags: Surface Mount, Power Amplifier. More details for CHA4350-QDG can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHA4350-QDG
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    GaAs Low Noise monolithic Amplifier from 5.5 to 11.7 GHz for 5G Application

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    5G
  • Industry Application
    Aerospace & Defense, Commercial, Cellular
  • Frequency
    5.5 to 11.7 GHz
  • Gain
    26 dB
  • Noise Figure
    5.5 dB
  • P1dB
    24 dBm
  • P1dB
    0.25 W
  • Grade
    Commercial
  • IP3
    32 dBm
  • IP3
    1.58 W
  • Saturated Power
    25 dBm
  • Saturated Power
    0.31 W
  • Input Power
    5 dBm
  • Input Power
    0.003 W
  • PAE
    28%
  • Pulsed/CW
    CW
  • Return Loss
    12 to 13 dB
  • Input Return Loss
    12 dB
  • Output Return Loss
    13 dB
  • Supply Voltage
    5.5 V
  • Quiscent Current
    125 mA
  • Transistor Technology
    pHEMT
  • Technology
    GaAs
  • Package Type
    Surface Mount
  • Package
    QFN
  • Dimensions
    4 x 4 mm
  • Operating Temperature
    -40 to 95 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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