CHA8611-99F Image

CHA8611-99F

Note : Your request will be directed to United Monolithic Semiconductors.

The CHA8611-99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 8.5 to 11 GHz, Gain 23 to 24 dB, Output Power 42.55 dBm, Output Power 18 W, Input Power 27 dBm. Tags: Surface Mount, Power Amplifier. More details for CHA8611-99F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHA8611-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    18 W X-Band Power Amplifier from 8.5 to 11 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT, Die
  • Industry Application
    Space, Military, Commercial
  • Frequency
    8.5 to 11 GHz
  • Gain
    23 to 24 dB
  • Output Power
    42.55 dBm
  • Output Power
    18 W
  • Input Power
    27 dBm
  • Input Power
    0.50 W
  • PAE
    43 %
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    25 us
  • Duty Cycle
    10 %
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    10 dB
  • Output Return Loss
    15 dB
  • Supply Voltage
    25 V
  • Current Consumption
    0.8 to 1.6 A
  • Transistor Technology
    GaN HEMT
  • Package Type
    Surface Mount
  • Dimensions
    4.36 x 2.57 x 0.1 mm
  • Storage Temperature
    -55 to 150 Degree C

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