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HTN9G22P370S

RF Amplifier by Watech Electronics
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The HTN9G22P370S from Watech Electronics is a RF Amplifier with Frequency 1805 to 2170 MHz, Gain 15.1 to 16.1 dB, Output Power 47.32 to 55.68 dBm, Output Power 54 to 370 W, Saturated Power 55.74 dBm. Tags: Flanged, Power Amplifier. More details for HTN9G22P370S can be seen below.

Product Specifications

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Product Details

  • Part Number
    HTN9G22P370S
  • Manufacturer
    Watech Electronics
  • Description
    LDMOS Amplifier from 1805 to 2170 MHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Application
    Base Station, Boosters/Repeaters, DAS, Mobile Infrastructure
  • Display Application
    3GPP 5G, 4G-LTE, Amplifier for Micro and Macro Base Stations, Repeaters/DAS, Mobile Infrastructure
  • Standards Supported
    5G, 4G/LTE, WCDMA
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    1805 to 2170 MHz
  • Gain
    15.1 to 16.1 dB
  • Output Power
    47.32 to 55.68 dBm
  • Output Power
    54 to 370 W
  • Saturated Power
    55.74 dBm
  • Saturated Power
    370 W
  • PAE
    46.5 to 55.4 %
  • Pulsed/CW
    CW/Pulsed View all
  • Pulse Width
    100 uS
  • Sub-Category
    Doherty Amplifier, Pulsed Amplifer
  • Return Loss
    11 to 15 dB
  • Input Return Loss
    11 to 15 dB
  • Supply Voltage
    28 V (Drain)
  • Current Consumption
    105 to 203 nA (Drain Leakage)
  • Quiscent Current
    380 mA
  • Technology
    LDMOS
  • Package Type
    Flanged View all
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
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