The SGN-X3-200 from KRATOS General Microwave is a GaN Power Amplifier that operates in the X-band with 9% bandwidth. It delivers peak saturated output power of more than 250W with a large signal gain of 55 dB and an efficiency of 20%. This solid-state amplifier has a pulse width of 256 µs, a rise/ fall time of 50ns, and a duty cycle of 15%.
The SSPA consists of an input section with preamplifier stages and a power amplifier output section. The output section consists of a summation of 6 amplifiers. In addition to the microwave section, there is a proprietary designed asynchronous low-noise power supply and pulse-modulator. The airborne SGN-X3-200 is available in a module that measures 9.0 x 7.0 x 1.6 inches with SMA (F) connector at the input and WR90 waveguide at the output. It is suitable for radar, data links, communications, and test system applications. This high-reliability amplifier consumes 280 W of power and has reverse voltage protection.