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United Monolithic Semiconductors Introduces New Monolithic Power Amplifier for X-Band Applications

United Monolithic Semiconductors Introduces New Monolithic Power Amplifier for X-Band Applications

United Monolithic Semiconductors has introduced the CHA5014-99F chip, a monolithic two-stage medium power amplifier designed for X-band applications.  This amplifier is relevant for systems that require an output power that is weakly sensitive to temperature. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. A special control circuit is implemented to stabilize the output power with temperature.

Key Features:

  • Frequency range: 8.5 to 11 GHz
  • 30 dBm Saturated output power
  • Temperature-compensated Output power
  • Two biasing modes:
    • Digital control thanks to the TTL interface
    • Analog control thanks to the Biasing circuit
  • Quiescent bias point: 8.5 V @ 230 mA
  • Chip size: 2.87 x 1.37 x 0.1 mm3 

Click here to learn more about CHA5014-99F from United Monolithic Semiconductors.

 Publisher: everything RF
Tags:-   Power Amplifier, Amplifier, Transistors

United Monolithic Semiconductors

  • Country: France
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