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CHA5014-99F Image

The CHA5014-99F from United Monolithic Semiconductors is a Two-Stage GaAs Power Amplifier that operates from 8.5 to 11 GHz. This driver amplifier is designed for systems that require an output power that is weakly sensitive to temperature, and it includes a special control circuit that stabilizes the output power with respect to temperature. It delivers a saturated output power of 1 W (~30 dBm) with a small signal gain of 20 dB and a power added efficiency of 35%. This two-stage driver amplifier has an input and output return loss of -12 dB. 

The CHA5014-99F  is manufactured using a GaInP HBT process, including via holes through the substrate & air bridges, and has a nitride layer that protects the transistors & the passive components. This MMIC amplifier requires a DC supply of 8.5 V and consumes less than 260 mA of current. It has two biasing modes - digital control via a TTL interface and analog control via a biasing circuit. This two-stage amplifier is available as a chip measuring 2.87 x 1.37 x 0.1 mm and is ideal for X-band applications.

Product Specifications

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Product Details

  • Part Number
    CHA5014-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    Two-Stage Power Amplifier MMIC from 8.5 to 11 GHz

General Parameters

  • Type
    Driver Amplifier View all
  • Configuration
  • Standards Supported
    X Band View all
  • Frequency
    8.5 to 11 GHz
  • Small Signal Gain
    20 dB
  • Gain Flatness
    ±0.25 dB
  • Output Power
    29 to 30 dBm
  • Output Power
    0.79 to 1 W
  • P1dB
    29 dBm
  • P1dB
    0.794 W
  • Saturated Power
    30 dBm
  • Saturated Power
    1 W
  • Pulsed/CW
  • Return Loss
    -12 dB
  • Output Return Loss
    -12 dB
  • Supply Voltage
    8.5 V
  • Current Consumption
    260 mA
  • Quiscent Current
    230 mA
  • Technology
    GaAs
  • RoHS
    Yes

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